First SiC Switching Power Bipolar Junction Transistor Announced

TranSiC AB, the developer of power transistors in wide bandgap Silicon Carbide today announced that they launches the first silicon carbide 20 Ampere, 600 Volts, switching power bipolar junction transistor.

Presented as the first such device of its type, the BitSiC0620 from TranSiC is a silicon carbide (SiC) 20-A, 600-V, switching power bipolar junction transistor (BJT). The “normally off” device has a collector-emitter saturation voltage that enables a reduction of more than 60% in on-state power losses compared to Si IGBT technology with the same chip area. Additionally, the BJT exhibits fast switching due to the small amount of stored charge of silicon carbide devices. Available as single dies, in TO220 packages, or on DCB substrates, the SiC BJT chip has been successfully tested up to over 250°C and down to -80°C.


Last News：Solder Cup Interconnects Terminate Discrete Wires
Next News：Lamp-Mounted Wireless Module Creates Municipal Networks